Methods and devices for thermal control in power amplifier circuits

ABSTRACT

Methods of turning on and/or turning off amplifier segments in a scalable periphery amplifier architecture are described in the present disclosure. The turning on and/or turning off the amplifier segments according to the various embodiments of the present can reduce spectral splatter in adjacent channels. In some embodiments, amplifier performance and efficiency can be improved by dissipating heat more uniformly.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application may be related to U.S. application Ser. No.14/042,312 entitled Methods and Devices for Impedance Matching in PowerAmplifiers filed on even date herewith and incorporated herein byreference in its entirety.

BACKGROUND

1. Field

The present application relates to power amplifiers. More in particular,it relates to methods and devices for thermal control in power amplifiercircuits.

2. Description of Related Art

In the field of mobile radios, a manufacturer can be dependent on theability to quickly turn changes to power amplifiers (PA) or a PowerAmplifier Module (PAM). These changes can be due to last minute changesin specification for the mobile radio to meet desired systemspecifications. This is a very difficult task for those PA's and PAM'sdependent on silicon technologies due in part to long design cycle timesand also long fabrication cycle times. These technologies include, butare not limited to, CMOS, SOI CMOS, SOS CMOS and BiCMOS. Such changescan affect an internal operating temperature of the PA/PAM.

SUMMARY

According to a first aspect, a method for turning off a subset ofamplifier segments in a set of turned on amplifier segments arranged oneby the other on a circuit is described, the method comprising:determining a number of amplifier segments to be turned off, thusdetermining the size of the subset of amplifier segments to be turnedoff; and turning off the amplifier segments of the subset of amplifiersegments, wherein, upon the turning off, a post-turning off distancebetween at least two adjacent remaining turned on amplifier segments isgreater than a pre-turning off distance between any adjacent turned onamplifier segments.

According to a second aspect, method of turning on a subset of amplifiersegments from a set of turned off amplifier segments arranged one by theother on a circuit is described, the method comprising: providing aplurality of amplifier segments in an amplifier circuit, wherein one ormore amplifier segments of the plurality of amplifier segments areturned off according to a set sequence and a set arrangement; andturning on the amplifier segments in a substantially similar sequenceand arrangement as the set sequence and the set arrangement.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated into and constitute apart of this specification, illustrate one or more embodiments of thepresent disclosure and, together with the description of exampleembodiments, serve to explain the principles and implementations of thedisclosure.

FIG. 1 shows a graph of an I-Q diagram.

FIG. 2 shows an example scalable periphery power amplifier circuitcoupled with a matching circuit and a driver stage amplifier.

FIG. 3 shows various graphs of drain voltage vs. drain current in anamplifier circuits.

FIGS. 4A-4B show an exemplary scalable periphery power amplifier circuitcoupled with a matching circuit.

FIG. 5 shows a flow chart of an exemplary sequence of turning off anumber of amplifier segments.

FIG. 6 shows a flow chart of an exemplary sequence of turning on anumber of amplifier segments.

FIG. 7 shows an exemplary Smith chart showing a shift in impedance as aconsequence of turning on or turning off the scalable peripheryamplifiers.

FIGS. 8A-8D show graphical responses for two different methods ofmatching impedance in an exemplary circuital arrangement.

FIGS. 9A-9C show amplifier devices in a scalable periphery architecture.

DETAILED DESCRIPTION

Many radio frequency (RF) front ends that are currently present in cellphones and other wireless devices comprise discrete devices. However, ahigher degree of integration in RF front ends may be desirable becausemarket forces tend to push for greater data throughput, which can resultin more complex waveforms being transmitted. For example, a constantenvelope FM (frequency modulated) signal may be relatively simplecompared to a waveform corresponding to 16 QAM (quadrature amplitudemodulation). FIG. 1 shows an exemplary signal constellationcorresponding to 16 QAM. Each ‘X’ represents one of 16 possible signalsto be transmitted, where phase and amplitude of an RF waveform of atransmitted signal correspond to angle between a vector to an Xrepresenting the transmitted signal and a horizontal axis (I); and thelength of such vector, respectively. Use of signal constellations torepresent a modulation scheme used in producing an RF waveform is knownby persons having ordinary skill in the art.

Transmission of more complex waveforms may, in turn, use amplifiers withmore linearity, since distortion of amplitude or phase caused bynonlinearity may be less tolerated in terms of correct signaltransmission. With reference to FIG. 1, a first signal 10 and a secondsignal 11 both have identical phase (e.g. direction of a vector from theorigin to each of the two signals 10, 11) but different amplitudes (asexpressed by magnitude of a vector from the origin to each of the twosignals 10, 11). Nonlinearity of an amplifier can result in amplitudedistortion, causing the first signal 10 to be erroneously transmittedwhen the second signal 11 was intended to be transmitted. As signalpoints in a signal constellation corresponding to a modulation scheme ofan RF waveform become more densely packed, smaller amounts of amplitudedistortion can result in erroneous signal transmission. In some cases,amplitude distortion can also result in phase distortion.

An amplifier can be more efficient in power use when operatingnonlinearly as opposed to operating linearly (e.g., efficiency of classA amplifier being less efficient than a class B amplifier, the class Bamplifier having lower linearity). Additionally, it may be desirable foran amplifier to be adapted/configured to operate in different modes(e.g., GSM vs. WCDMA) as well as on different frequency bands. The term“mode” is intended to refer to a given wireless standard and attendantmodulation and coding scheme(s). Furthermore, there can be a consistentmarket push towards smaller sizes of cell phones and other wirelessdevices. Due to such demands for higher data throughput, betterlinearity, higher efficiency, multimode and/or multiband operation,there is a greater demand for a more integrated RF front end.

A more integrated RF front end where one or more components areadjustable can be reduced in size and complexity compared to a discreteRF front end with multiple elements that must be switched in order toaccommodate different modes and different bands. One component that mayenable such integration is an amplifier that can be dynamically adjustedduring operation of a cell phone or wireless device with an adjustableamplifier. An RF front end comprising such an adjustable amplifier maynot need to switch between multiple fixed amplifiers, but could ratheruse a smaller number (or just one) of the adjustable amplifiers toachieve desired performance characteristics (e.g., linearity, datathroughput, multimode multiband operation, and so on).

An SPTM (scalable periphery tunable matching) amplifier can serve as anadjustable amplifier. FIG. 2 shows an example SPTM amplifier 99 with aninput from a driver 13 and comprises an SP (scalable periphery)amplifier 24 with an SP output terminal 25 connected to a TM (tunablematching) circuit 26. An RF signal applied at an input terminal 12 canbe amplified by the driver 13 to produce a driver amplified signal at adriver output terminal 14. The driver amplified signal at the driveroutput terminal 14 can be passed through a bypass capacitor 15 toproduce a DC blocked driver amplified signal at an SPTM input terminal17 corresponding to a gate of a first FET 30 (e.g., MOSFET). The sourceof the first FET 30 is connected to ground 29. A bias network 18 canalso be connected to the SPTM input terminal 17 to set a DC bias pointfor the SPTM amplifier. A bias voltage can also be applied to a gate 32of a second FET 31 or other FETs used in constructing the SP amplifier24.

The SP amplifier 24 can amplify the DC blocked driver amplified signalat the SPTM input terminal 17 to produce an SP amplified signal at theSP output terminal 25. DC current can be supplied to the SP amplifier 24from a voltage source 22 through an inductor 23 that acts as an RFchoke, blocking flow of RF Power. In some embodiments, each amplifiersegment 19, 20, 21 can be supplied by a separate voltage sourceconnected via a separate inductor (RF choke).

The SP amplified signal can be applied to the TM circuit 26 whereby theimpedance can be adjusted by one or more control signals 28. The one ormore control signals 28 can be provided by a control circuitry (notshown). The resulting SPTM amplified output signal can be sent outthrough an SPTM output terminal 27. The SPTM output terminal 27 can beconnected to a load such as, but not limited to, an antenna of a cellphone; downstream splitters, duplex or other filters, cables, and/orfeed networks used in delivering cable television service to a consumer;further amplifier stages; and/or a beam forming networking in a phasedarray radar system. These example loads as well as other loads may beknown to a person skilled in the art.

The SP amplifier 24 can comprise one or more amplifier segment 19, 20,21 connected in parallel. Each amplifier segment 19, 20, 21 can beselectively activated or deactivated by a corresponding enable signal 16applied to the amplifier segments 19, 20, 21. Each enable signal 16 canbe provided by control circuitry, not shown in FIG. 2. The enable signal16 can be determined according to a desired bias current through theSPTM amplifier 99. Deactivating the amplifier segments can result in adecreased total bias current through the SP amplifier 24, whileactivating the amplifier segments can result in an increased total biascurrent through the SP amplifier 24. Selectively activating ordeactivating the amplifier segments to adjust the bias current throughthe SP amplifier 24 will be referred to as adjusting a periphery of theSP amplifier 24.

Each amplifier segment 19, 20, 21 can comprise one or more transistors30, 31 that are configured to operate as an amplifier. By way ofexample, and not of limitation, each amplifier segment can comprise astack of two or more FETs 30, 31 (e.g., MOSFETs). The SPTM inputterminal 17 corresponds to the gate of the first FET 30 in the stack ofFETs, while an output signal is taken from a drain of a last (e.g.,second, third, etc.) FET in the stack. This drain is connected to the SPoutput terminal 25.

The TM circuit 26 can comprise one or more variable reactances that canbe adjusted such that the TM circuit 26 can yield variable impedances atthe SP output terminal 25. A person skilled in the art would understandthat instead of reactances, resistances can also be present in the TMcircuit 26. Impedance of the TM circuit 26 can be adjusted by one ormore control signals 28 applied to the variable reactances. Tunablematching circuits are also described, for example, in U.S. patentapplication Ser. No. 13/967,866, entitled “Tunable Impedance MatchingNetwork”, filed on Aug. 15, 2013, incorporated by reference herein inits entirety.

FIG. 3 shows graphs 33, 34, 35 with total current through the SPamplifier 24 represented on the vertical axis and voltage of the SPTMoutput terminal 27 represented on the horizontal axis. The diagonal loadline has a slope that is equal to a negative reciprocal of resistancepresented by the TM circuit 26 at the SP output terminal 25. The DC biaspoint indicates voltage across all amplifier segments 19, 20, 21 andtotal current through the SP amplifier 24 (sum of currents flowingthrough all active amplifier segments) when the RF signal is equal tozero.

Although the graphs shown in FIG. 3 represent voltage and currentcharacteristics for a class A amplifier, the amplifier segments 19, 20,21 and the SPTM amplifier 99 can be configured as other amplifierclasses such as, class B, class AB, and so on. The area of the shadedbox can be proportional to RF power, while the area of the solid box canbe proportional to DC power. Efficiency is generally a function of theratio of RF power to DC power. As the RF signal oscillates, an operatingpoint can move along the load line to indicate instantaneous voltage atthe SP output terminal 25 and instantaneous total current through the SPamplifier 24.

Consider that graph 33 represents voltage and current characteristics ofthe SPTM amplifier 99 when all amplifier segments 19, 20, 21 are active,while the second graph 34 represents voltage and current characteristicsof the SPTM amplifier 99 when half of all amplifier segments 19, 20, 21have been turned OFF. In graph 34, the load line has been adjusted for ashallower slope, which corresponds to the increased load resistance.Because of the increased load resistance shown in graph 34 relative tothat shown in graph 33, voltage swing (horizontal) at the SP outputterminal 25 for a smaller current swing (vertical) can remain as largeas the voltage swing shown in graph 33. The smaller current swing can becaused, for example, by a smaller voltage swing of the signal at theSPTM input terminal 17. Graph 35, can, for example, represent voltageand current characteristics of the SPTM amplifier when three fourths ofall amplifiers segments 19, 20, 21 have been turned OFF. Because theload line has been adjusted for an even shallower slope (correspondingto increased load resistance) than in graph 34, for a smaller currentswing (vertical), voltage swing (horizontal) at the SP output terminal25 can remain as large as in graphs 33, 34.

The total bias current is adjusted by selectively activating ordeactivating individual amplifier segments. Amplifier segments can bedesigned such that each amplifier segment that remains active exhibits aconstant bias current. Graph 36 shows current and voltagecharacteristics for an individual amplifier segment that remainsactivated (e.g., ON). Both bias current and load resistance (negativereciprocal of slope of load line) can remain constant for the individualamplifier segment that remains ON. The load resistance seen by theindividual amplifier segment that remains ON can be constant because,although the resistance presented by the TM circuit 26 increases, suchresistance presented by the TM circuit 26 is distributed across asmaller number of amplifier segments operating in parallel.

With reference to graphs 33, 34, 35 shown in FIG. 3, the ratio of RFpower to DC power can remain constant since the area of the shaded boxdecreases proportionally to the area of the solid box, as the peripheryof the SPTM amplifier 99 is reduced in combination with the increase inresistance presented by the TM circuit 26 at the SP output terminal 25.Efficiency is a function of the ratio of RF power to DC power.Therefore, even at differing power levels, an efficiency of the SPTMamplifier 99 shown in FIG. 2 can remain constant. Another interpretationis that because voltage and current characteristics for each individualamplifier segment that remains ON can remain constant, as shown in graph36 of FIG. 3, efficiency of each individual amplifier segment thatremains ON can also remain constant. Therefore, efficiency of theoverall SPTM amplifier shown in FIG. 2 can remain constant. Moredetailed information regarding SPTM amplifiers can be found, forexample, in U.S. patent application Ser. No. 13/797,779, entitled“Scalable Periphery Tunable Matching Amplifier”, filed on Mar. 12, 2013,incorporated by reference herein in its entirety.

According to some embodiments of the present disclosure and withcontinued reference to FIG. 2, the TM circuit 26 can comprise evenand/or odd harmonic termination, such as to enhance certain harmonics(e.g. odd harmonics) and/or attenuate certain harmonics of a signal tobe transmitted, for improved linearity and efficiency of the transmitcircuitry. Such harmonic shorts and/or harmonic opens may bevariable/configurable harmonic terminations, configured, for example, toadapt output/final stage of the amplifier to different modes andfrequency bands via the variable components of the TM circuit 26. Moreinformation on variable harmonic terminations can be found in, forexample, U.S. patent application Ser. No. 13/797,686, entitled “VariableImpedance Match and Variable Harmonic Terminations for Different Modesand Frequency Bands”, filed on Mar. 12, 2013, which is incorporatedherein by reference in its entirety.

Embodiments of the present disclosure describe electrical circuits inelectronics devices (e.g., cell phones, transceivers) having a pluralityof devices, such as for example, transistors (e.g., MOSFETS). Personsskilled in the art will appreciate that such electrical circuitscomprising transistors can be arranged as amplifiers. Further, aplurality of such amplifiers can be arranged in the above described“scalable periphery” (SP) architecture of amplifiers where although atotal number (e.g., 64) of amplifiers are provided, only a fraction ofsuch amplifier segments (e.g., 32, 16, 8, or even 4, etc.) is used eachtime based on, for example, needs of the application being performed bythe electronic device. For example, in some instances, the electronicdevice may desire to output a certain amount of power, which in turn,may require 32 of 64 SP amplifier segments to be used. In yet anotherapplication of the electronic device, a lower amount of output power maybe desired, in which case, for example, only 16 of 64 SP amplifiersegments are used. Additionally, the person skilled in the art wouldunderstand that the use of amplifiers in electronic devices can generateheat. Similarly to scaling the SP amplifier segments for output powerrequirements, the SP amplifier segments can be turned on and/or turnedoff to balance thermal distribution of the electronic circuit. In otherwords, in a given first time period, a first number of amplifiersegments can be used, while in a subsequent time period, a differentnumber of devices can be used based on desired powerconsumption/conservation or heat generation/distribution purposes.

The term “amplifier” as used in the present disclosure is intended torefer to amplifiers comprising single or stacked transistors configuredas amplifiers, and can be used interchangeably with the term “poweramplifier (PA)”. Such amplifier and power amplifiers can be applicableto amplifiers and power amplifiers of any stages (e.g., pre-driver,driver, final), known to those skilled in the art. The scalableperiphery amplifier segments can be connected to corresponding impedancematching circuits. The terms “turn on”, “switch on” and “enable” can beused interchangeably and is intended to refer to allowing a device(e.g., amplifiers, amplifier segments, transistors) to operate. Theterms “turn off”, “switch off” and “disable” can be used interchangeablyand is intended to refer to allowing a device (e.g., amplifiers,amplifier segments, transistors) to not operate.

Embodiments of the present disclosure also describe scalable peripheryamplifier devices and their corresponding impedance matching circuits.Such scalable periphery amplifier devices have a particular impedancevalue according to the number of amplifier devices that are turned on orturned off at a given moment. The person skilled in the art wouldunderstand that other factors such as, for example, the configuration,arrangement, or material can also affect and vary the impedance of theamplifier device or the matching circuits.

As described above, an electronic circuit where all of the amplifiers ofthe scalable periphery architecture are turned on can be considered tobe operating at full power, and such configuration can have a certainoutput impedance based on the number of amplifiers that are turned on.In some instances, it can be desirable to turn off some amplifiers tooperate the electronic circuit at reduced power consumption or to reduceheat generation. Similar to measuring a total resistance of a pluralityof resistors connected in parallel with each other, the total impedanceof the plurality of amplifiers in an SP amplifier architecture can becalculated, simulated or measured in a similar manner. As known by thoseskilled in the art, the greater the number of amplifiers devices (inparallel), the lower the total impedance, and vice versa.

For determining the output impedance, an amplifier segment that isturned off can be considered an open circuit (e.g., power amplifierdevice removed). Thus, if a certain number of amplifiers segments areturned off, then the total impedance of the amplifier will be higher. Onthe other hand, if the amplifier segments are turned on, then the totalimpedance of the amplifier will be lower. As the amplifier segments areturned on or turned off, the number of amplifier segments contributingto the output impedance of the amplifier is increased or decreased.

By way of example and not of limitation, FIGS. 4A-4B show an example SPamplifier circuit 101 electrically coupled with an impedance matchingcircuit 107, also referred to herein, and used interchangeably with theterm “matching circuit”. The exemplary matching circuits shown in FIGS.4A-4B comprise a low pass filter, and will be used to describe variousembodiments of the present disclosure. However, those skilled in the artwill understand that the embodiments of the present disclosure can beapplicable to a variety of other impedance matching circuits.

The amplifier circuit 101 shown in FIG. 4B represents a plurality ofamplifiers, for example, 64 amplifier segments. Inductors 102, 103 anddigital tunable capacitors (DTCs) 105, 106 make up the exemplarymatching circuit (e.g., low pass filter), and capacitor 104 is acoupling capacitor. The exemplary matching circuit 107 can haveimpedance that can be changed by adjusting, or tuning the DTCs 105, 106.DTCs are described in detail, for example, in U.S. patent applicationSer. No. 12/735,954, which is incorporated herein by reference in itsentirety.

Although not shown in FIGS. 4A-4B, according to some embodiments of thepresent disclosure, inductors 102 and/or 103 can also be variableinductors, such as for example, digital tunable inductors (DTLs), suchas to provide further flexibility in adjustment of a response of the TMcircuit 107 of FIG. 4A. More information regarding tunable reactiveelements, including digitally tunable inductors (DTLs), may be found,for example, in U.S. patent application Ser. No. 13/595,893 entitled“Method and Apparatus for Use in Tuning Reactance in an IntegratedCircuit Device”, filed on Aug. 27, 2012, which is incorporated herein byreference in its entirety.

In an exemplary electronic circuit, such as the one shown in FIGS.4A-4B, the output impedance of the SP amplifier circuit 101 and theimpedance of the matching circuit 107 are matched, such that theimpedances are substantially equal to one another. As the amplifiersegments of the SP amplifier circuit 101 are turned on or turned off(e.g., according to power requirements), the output impedance of the SPamplifier will change, thus no longer matching the impedance of thematching circuit 107.

Those skilled in the art will understand that coupling an amplifiercircuit 101 with a circuit whose output impedance does not match withthe output impedance of the SP amplifier 101 can generate splatter in anadjacent channel, thus failing to meet adjacent channel coupled power oradjacent channel leakage ratio (ACLR) specifications (e.g., widebandCDMA specification). In order to compensate for the mismatch of theoutput impedance, the impedance of the matching circuit 107 can beadjusted to match the impedances as close to each other as possible.Thus, when turning on or turning off a certain number of amplifiersegments, the impedance of the matching circuit 107 can be firstadjusted or the amplifier segments can be first turned on and/or turnedoff Applicants have found that the sequence of matching impedances(e.g., adjust the matching circuit first or last) can ensure that outputpower is kept within specification and does not leak to adjacentchannels.

According to an embodiment of the present disclosure, in order tomaintain linearity and avoid spectral splatter, when it is desired toturn off one or more of the SP amplifier segments, the impedance of thematching circuit 107 is first changed to the expected new impedance ofthe amplifier circuit. Then, the amplifier segments can be turned offonce the impedance of the matching circuit is first adjusted. Byadjusting the impedance of the matching circuit 107 before turning offthe amplifier segments, linearity of the amplifier circuit can bemaintained, which can be shown using a Smith Chart, explained later.

By way of example and not of limitation, when all 64 amplifier segmentsof the amplifier circuit 101 are turned on, the amplifier circuit 101can have an impedance of 2 ohms. DTC 105 can have a reactance of 3 ohmsand DTC 106 can have a reactance of 5 ohms, thus the matching circuit107 realizes an impedance of approximately 2 ohms. Therefore, theimpedance of the amplifier circuit 101 and the matching circuit 107 areapproximately equal, thus matching.

When a certain number of amplifier segments of the amplifier circuit 101are turned off, for example, 32 of the 64 amplifier segments, the outputimpedance of amplifier circuit 101 increases, for example, to 4 ohms.However, the impedance of the matching circuit 107 is stillapproximately 2 ohms, and therefore does not match with the outputimpedance of the amplifier circuit 101. Although the impedance of thematching circuit 107 can be changed to match the new output impedance ofthe amplifier circuit 101, matching of the impedances in this order canresult in spectral splatter.

According to an embodiment of the present disclosure, in order tofacilitate impedance matching, the impedance of the matching circuit 107is changed first, prior to turning off the amplifier segments of theamplifier circuit 101 when the 32 amplifier segments are expected to beturned off. By way of example and not of limitation, adjustablecomponents of the matching circuit 107 can be adjusted first, such asfor example DTCs 105, 106, until the impedance of the matching circuit107 is substantially equal to the output impedance expected of theamplifier circuit 101 when the amplifier segments are disabled (seesteps 51-52 in FIG. 5). Once such desired impedance is established bythe matching circuit 107, the amplifier segments of amplifier circuit101 can be turned off (see steps 53-54 in FIG. 5). In the case whereinductors 102 and 103 of the matching circuit 107 are adjustable (e.g.DTLs), these inductors can also be adjusted prior to turning off theamplifier segments of the amplifier circuit 101.

According to another embodiment, similar to turning off the amplifiersegments, when it is desired to turn on the amplifier segments, animpedance mismatch between the amplifier and the matching circuit isalso created. Differently from when turning off the amplifier segments,when it is desired to turn on amplifier segments, the amplifier segmentscan be turned on first, before changing the impedance of the matchingcircuit 107. In other words, the impedance of the amplifier is firstlowered (by turning on one or more amplifier segments), then theimpedance of the matching circuit is lowered next (see steps 61-63 inFIG. 6). By performing the impedance matching in this order, theimpedance of the matching circuit 107 is always substantially equal orhigher than the impedance of the amplifier, thus maintaining linearityand avoiding spectral splatter in the adjacent channels.

In some embodiments, the electronic circuit can comprise a controllerthat can be programmed to turn on and/or turn off the amplifier segmentsand change the impedance of the matching circuit by adjusting, forexample, the DTCs. Such controller can be programmed with the expectedimpedance values of the amplifier circuit when portions of amplifiersegments are turned on and/or turned off. Therefore, according to theembodiments described above, the impedance of the matching circuit canbe changed either before or after turning off or turning on,respectively, the amplifier segments to match the expected new impedanceof the amplifier circuit. By way of example and not of limitation, thecontroller can be programmed such that when 64 amplifier segments areturned on, the impedance is 2 ohms, while when 32 amplifier segments areturned on, the impedance is 4 ohms, etc. Therefore, when it is desiredto turn off 32 amplifier segments of the 64 amplifier segments, thecontroller knows that turning off 32 amplifier segments would result inan impedance of 4 ohms, and therefore should change the impedance of thematching circuit to 4 ohms before turning off the 32 amplifier segments.A person skilled in the art would understand that such impedance valuesare just example values and can differ depending on the variousconfigurations, arrangements, and material used.

FIG. 7 shows a Smith chart showing the location of approximate impedancevalue with a dot 201 when all 64 amplifier devices of the amplifiercircuit 101 are turned on. In the case where 32 amplifier devices arefirst turned off (thereby changing the impedance of the amplifiercircuit 101) before changing the impedance of the matching circuit 107,the impedance value of the amplifier on the Smith chart moves toward theright while the impedance value of the matching circuitry stays at point201 (thus away from linearity) as shown with dot 203. Consequently,spectral splatter increases. In other words, the impedance of theamplifier moves toward the right (e.g., point 203), while the impedancevalue of the matching circuitry is still ideally at point 201, which isaway from linearity and higher spectral splatter.

In the case where the impedance of the matching circuit 107 is firstadjusted to the expected output impedance of the amplifier circuit 101,and then the 32 amplifier segments are turned off, the impedance valueof the matching circuitry on the Smith chart moves toward the right(thus towards linearity) as shown with dot 203. The amplifier circuit101 operates more linearly in this higher impedance value (while theimpedance of the amplifier is still at point 201 before it is switchedoff), and spectral splatter is also reduced.

Although an impedance mismatch is created by changing the number ofturned on amplifier segments, by first adjusting the impedance of thematching circuit before turning off the amplifier segments when reducingthe number of turned on amplifier segments, or turning on the amplifiersegments before adjusting the impedance of the matching circuit, theimpedance of the matching circuit can be maintained at a higherimpedance relative to the amplifier impedance, thus maintaininglinearity and avoiding spectral splatter.

FIGS. 8A-8B show example responses of third order intermodulation (IM3)when the impedance of the matching circuit is lower than the impedanceof the amplifier circuit, for example, when the amplifier devices arefirst switched off before the impedance of the matching circuit is 107is first increased. FIG. 8A shows the IM3 products above the maincarrier and FIG. 8B shows the IM3 products below the carrier. By way ofexample and not of limitation, a figure of merit can be −25 dBc. Personsskilled in the art would recognize that linearity and spectral splatterwill be maintained if the IM3 products are more negative than −25 dBc.The IM3 responses in FIGS. 8A-8B stay above −25 dBc for low powerconditions and only for narrow ranges of output power for the threehighest output power settings. This leads to spectral splatter duringswitching to the lower power states.

FIGS. 8C-8D show example IM3 responses when the matching circuit 107 isfirst adjusted before the amplifier segments are turned off Largerranges of output power is apparent for all cases of reduced peripherythat the IM3 is maintained below −25 dBc. This shows that linearity ismaintained and spectral splatter is avoided.

Although the process of turning on and/or off the amplifier segments andthe changing the impedance of the matching circuit occurs sequentially,such sequence occurs almost simultaneously. The delay can be in therange of approximately 50 microseconds.

In some embodiments, switching from a first kind of periphery (e.g., 64amplifier segments) to a second kind of periphery (e.g., 32 amplifiersegments) may entail relevant thermal considerations. In other words, ifthe entire periphery contains 64 amplifier segments and the top 32amplifier segments (assuming the devices are arranged in a straight linefrom top to bottom) are turned off, the electrical circuit in which thedevices are located may be unbalanced in terms of heat consumption, withpossible undesired effects on the functions of the circuit. For example,the upper section may cool down while the lower section may continue togenerate concentrated heat.

A turning off (and/or corresponding turning on) method can be desiredthat minimizes, or at least reduces such imbalance of heat consumption,thereby reducing the possibility of the undesired effects on thefunctions of the circuit. By way of example and not of limitation, FIG.9A shows an example schematic arrangement of a plurality of amplifiersegments in the scalable periphery 402 architecture having a total of 16amplifier segments 400A-400P. Although the scalable periphery amplifierarchitecture can comprise any number of amplifier devices, for purposesof providing examples in the present disclosure, an exemplary systemcomprising 16 amplifier devices is described, as shown in FIGS. 9A-9C.

According to some embodiments, it may be desirable to turn off one ormore of the amplifier segments 400A-400P, for example, to reduce powerconsumption or to minimize heat generation. One possible method is toturn off half (8 of 16) of the amplifier segments, while leaving on theother half of the amplifier segments, thereby reducing the amount ofpower consumed by the amplifier circuit. The amplifier circuit, inaddition to consuming power, can generate and thus dissipate heat whenin operation. In addition to just turning off a number of amplifiersegments, it can be desirable to turn off those amplifier segments in aconfiguration that can facilitate uniform distribution of thedissipating heat.

In some embodiments, assuming that switching from a configuration whereall of the segments are used, to a configuration where only half of suchsegments are used is desired, half of the amplifier segments can beturned off in a specific configuration so as to distribute dissipatingheat more uniformly among the amplifier devices. By way of example andnot of limitation, one possible configuration as shown in FIG. 9B is toturn off every odd amplifier devices 400A, 400C, 400E, 400G, 4001, 400K,400M, 400O, or every even amplifier devices 400B, 400D, 400F, 400H,400J, 400L, 400N, 400P, thereby more evenly spreading out the heatgenerated from each of the amplifier segments.

In such configuration where every other amplifier device is switchedoff, the generated heat is distributed more uniformly across the entireamplifier circuit because the distance between adjacent amplifiersegments that are on are greater than the distance between adjacentamplifier segments that are on before turning off every other amplifiersegments. Consequently, heat concentration in a given area as a resultof heat dissipation from one amplifier segment that is on and oneamplifier segment that is off (e.g., after turning off), is less thanthe heat concentration in the same sizable area as a result of heatdissipation from two amplifier segments that are on (e.g., beforeturning off). As a result, the overall circuit can allow for uniformheat distribution, improved heat dissipation, thus a cooler device,which in turn, can improve electrical performance.

In some cases, as shown in FIG. 9C, the temperature of the amplifiersegments located toward the center region of the scalable peripheryamplifier circuit shown with box 401 can be higher than the temperatureof the amplifier segments located toward the outer region of thescalable periphery amplifier segments since the amplifier segments inthe center region 402 are surrounded by other amplifier segments, whichare also generating heat. On the other hand, the amplifier segmentstoward the outer region of the scalable periphery amplifier segments(e.g., 400A, 400B, 400O, 400P) can dissipate their heat in an outwarddirection toward the edges where there are no other amplifier segments.

In some cases, other heat dissipation factors can also be considered forfurther uniform heat distribution. For example, the amplifier segmentslocated toward the center region 400G, 400H, 4001, 400J of the scalableperiphery amplifier segments can be more difficult to dissipate heatsince those amplifier segments are surrounded by more adjacent amplifiersegments which are also generating heat, compared to the amplifiersegments located toward the outer regions (e.g., 400A-400F, 400K-400P)of the scalable periphery amplifier segments where there are less, or noadjacent amplifier segments.

By way of example and not of limitation, a subset of amplifier segmentsin the center region 400G, 400H, 4001, 400J can be turned off to reducethe heat load of the highest concentrated region. Assuming it is stilldesired to turn off exactly half of the total number of amplifiersegments, in addition to turning off the subset of amplifier segments inthe center region, four additional amplifier segments can also be turnedoff. FIG. 9C shows one such example configuration where amplifiersegments 400C, 400E, 400L, 400N are turned off, such that a total of 8out of 16 amplifier segments are turned off. The person skilled in theart will understand that other configurations are also possible toobtain substantially similar distribution of heat, thus avoidinghotspots.

In some embodiments, similarly to turning off the amplifier segments asdescribed herein, a corresponding turning on method can be used to turnon the amplifier segments, for example, to full power where all of theamplifier segments of the scalable periphery amplifier segments are on.Such turning on procedure can be performed in a reverse order from whichthe amplifier devices were turned off.

The examples set forth above are provided to give those of ordinaryskill in the art a complete disclosure and description of how to makeand use the embodiments of the present disclosure, and are not intendedto limit the scope of what the inventors regard as their disclosure.Modifications of the above described modes for carrying out thedisclosure may be used by persons of skill in the art, and are intendedto be within the scope of the following claims. All patents andpublications mentioned in the specification may be indicative of thelevels of skill of those skilled in the art to which the disclosurepertains. All references cited in this disclosure are incorporated byreference to the same extent as if each reference had been incorporatedby reference in its entirety individually.

It is to be understood that the disclosure is not limited to particularmethods or systems, which can, of course, vary. It is also to beunderstood that the terminology used herein is for the purpose ofdescribing particular embodiments only, and is not intended to belimiting. As used in this specification and the appended claims, thesingular forms “a”, “an”, and “the” include plural referents unless thecontent clearly dictates otherwise. The term “plurality” includes two ormore referents unless the content clearly dictates otherwise. Unlessdefined otherwise, all technical and scientific terms used herein havethe same meaning as commonly understood by one of ordinary skill in theart to which the disclosure pertains.

A number of embodiments of the disclosure have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the presentdisclosure. Accordingly, other embodiments are within the scope of thefollowing claims.)

The invention claimed is:
 1. A method for turning off a subset ofamplifier segments in a set of turned on amplifier segments arranged inan integrated circuit so that a distance is established between any twoadjacent turned on amplifier segments in the set of turned on amplifiersegments the method comprising: determining a number of amplifiersegments to be turned off, thus determining the size of the subset ofamplifier segments to be turned off; and turning off the amplifiersegments of the subset of amplifier segments, wherein, upon the turningoff, a post-turning off distance between at least two adjacent remainingturned on amplifier segments is greater than a pre-turning off distancebetween any adjacent turned on amplifier segments.
 2. The method ofclaim 1, wherein the subset of amplifier segments is half the set ofturned on amplifier segments, and the post-turning off distance betweenany two adjacent remaining turned on amplifier segments is greater thanthe pre-turning off distance between any adjacent turned on amplifiersegments.
 3. The method according to claim 1, wherein the amplifiersegments of the set of turned on amplifier segments are arranged from afirst amplifier segment to a last amplifier segment, thus defining evennumbered amplifier segments and odd numbered amplifier segments, and theturning off the amplifier segments comprises turning off all the evennumbered amplifier segments or all the odd numbered amplifier segments.4. The method according to claim 1, wherein the amplifier segments ofthe set of turned on amplifier segments comprise a middle set ofamplifier segments between two outer sets of amplifier segments, and theturning off the amplifier segments comprises turning off all theamplifier segments of the middle set of amplifier segments and at leastone amplifier segment of each of the outer set of amplifier segments,the turning off the at least one amplifier segment of each of the outerset of amplifier segment establishing, for each of the outer sets ofamplifier segment, a post-switching distance between at least twoadjacent outer set turned on amplifier segments that is greater than apre-turning off distance between any adjacent outer set turned onamplifier segments.
 5. The method according to claim 4, wherein theamplifiers of each outer sets of amplifiers are arranged, for each ofthe outer sets, from a first outer set amplifier to a last outer setamplifier, thus defining even numbered outer set amplifiers and oddnumbered outer set amplifiers, and the switching off of at least oneamplifier of each of the outer set of amplifiers comprises switching offall the even numbered outer set amplifiers or all the odd numbered outerset amplifiers of each outer set.
 6. The method according to claim 1,wherein the turning off the subset of amplifier segments distributesheat uniformly across the integrated circuit and lowers the temperatureof the integrated circuit.
 7. The method according to claim 1, whereinthe turning off the subset of amplifier segments is based on selectingthe determined number of amplifier segments such as to minimize thetemperature of the integrated circuit.
 8. A method for turning onamplifier segments from a set of amplifier segments turned off accordingto the method of claim 1, the turning on method comprising: determininga number of amplifier segments to be turned on, thus determining apost-turning on size of the turned on amplifier segments; and turning onthe turned off amplifier segments in a reverse order from which theamplifier segments were turned off.
 9. A method of turning on a subsetof amplifier segments from a set of turned off amplifier segments, themethod comprising: providing a plurality of amplifier segments in anintegrated amplifier circuit, the plurality of amplifier segments beingarranged so that a distance between any two amplifier segments of theplurality of amplifier segments is established, wherein one or moreamplifier segments of the plurality of amplifier segments are turned offaccording to a set sequence and a set arrangement; and turning on theamplifier segments in a substantially similar sequence and arrangementas the set sequence and the set arrangement, the set arrangement beingselected to uniformly distribute heat generated from turned on amplifiersegments across the integrated amplifier circuit.
 10. The methodaccording to claim 9, wherein the set arrangement is every otheramplifier segment of the plurality of amplifier segments.
 11. The methodaccording to claim 9, wherein the set arrangement is a group ofamplifier segments in a center region of the plurality of amplifiersegments.